The GaN epitaxial wafer market is expected to grow at a
PUNE, India, July 7, 2021 (GLOBE NEWSWIRE) – The Global GaN Epitaxial platelets Market share, trends, analysis and forecast, 2020-2030 provides information on key developments, business strategies, research and development activities, supply chain analysis, competitive landscape and market analysis. the composition of the market.
GaN epitaxial wafers are composite multilayer formations (Al, In, Ga) N developed by a process of metallic integrated chemical vapor accumulation epitaxy (MOCVD) on silicon or silicon carbide (SiC) substrates . The resulting GaN / Si and GaN / SiC epitaxial wafers are used to fabricate electronic devices with A-one performance against the technologies required in terms of RF power density, power switching ratio, strength and sensor sensitivity.
The substrate is a wafer formed from monocrystalline semiconductor materials. The case can immediately enter into the procedure of manufacturing wafers to mount semiconductor devices; furthermore, it can be processed by epitaxial processing to create epitaxial slices. Epitaxy refers to the activity of growing a new single crystal on a single crystal substrate that has been treated with care by pruning, grating, shining, etc.
Epitaxy is a procedure in which an additive single crystal silicon layer is deposited on the polished crystal surface of a silicon wafer. This process makes it possible to individually choose the constituent properties of the polished substrate, and therefore to create plates which acquire contrasting properties in the substrate and the epitaxial layer. In countless cases, this is required for the activity of the semiconductor element.
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Growth Drivers of GaN Epitaxial Wafers Market
Bulk monocrystalline materials are struggling to meet the flourishing demands of various semiconductor devices. As a result, it accelerates the improvement of the epitaxial hike of the thin-film monocrystalline material.
As for silicon, when the silicon epitaxial growth technology was established, high frequency and high power silicon transistors were difficult to manufacture. From the point of view of the principle of the transistor, to achieve high frequency and high power, the decay voltage of the collector area must be huge; the series resistance must be low. That is, the congestion pressure drop should be small. The first requires high electrical resistivity of the materials in the collector area, while the second requires low electrical resistivity of the components. The two contradict each other.
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Reducing the component density of the collector area will cause the series resistance to drop. However, the silicon wafer will be too thin and delicate to process. Reducing the resistivity of the component will counteract the first condition. Thus, the evolution of epitaxial technology successfully clarifies this complication.
In addition, gas phase epitaxy, liquid phase epitaxy and other epitaxy technologies of GaAs and alternative molecular compound semiconductor materials such as III-V, II-VI and other materials Semiconductors with molecular compounds have been tremendously advanced and have become an essential process. technology for most microwave devices, optoelectronic machines, electrical machines, etc., mainly molecular beam epitaxy and metallic organic vapor phase in thin layers, superlattices, constrained superlattices, quantum wells and thin films of atomic level.
The GaN epitaxial wafer offers a gadget-level modernization to meet the prerequisites for next-generation 5G radio frequency (RF) cellular networks, customer power supplies and proprietary sensor systems. The epitaxial wafers provide an additional monocrystalline face layer. They are essential for the assembly of highly unified semiconductor elements (IC), image sensors (CIS). The main competitors in this region are focusing on the display of advanced devices to comply with the growing obligations and demands of buyers.
The main market segments of the GaN epitaxial wafers market
In terms of geographic segment, Asia-Pacific is expected to be powerful in the global GaN epitaxial wafer market during the forecast period 2020-2030. This results in heavy use of GaN-based transistors in the defense and military industries. Growing appeal for LEDs from discrete industries such as customer electronics and automotive and the growing production of renewable energy in the region.
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As a precedent, in June 2019, Samsung announced the launch of The Wall Luxury GaN micro-LED display configurable from 73 “in 2K to 292” in 8K. In addition, the Asia-Pacific region is expected to experience considerable growth during the forecast period, which may be associated with the increasing approval of contemporary automation such as epinucleation, buffer arrangement technology, etc. . in countries such as India, China, Japan and South Korea. .
The main competitors in this region are obsessed with expanding new goods to reach the booming uses and preconditions of buyers. For example, in June 2019, Xiamen San’an Integrated Circuit Co., Ltd., a China-based pure play wafer store with its advanced compound semiconductor technology platform, launched the launch of its nitride of 150mm gallium (GaN) on silicon wafer foundry services for the latest high voltage DC / AC and AC / DC power electronics applications worldwide.
The major players in the global GaN epitaxial wafer market are:
Mitsubishi Chemical Corporation, Nitride Semiconductors Co., Ltd, GLC Semiconductor Group, EpiGaN, POWDEC KK, SCIOCS, Atecom Technology Co., Ltd, Homray Material Technology, IGSS GaN, Dongguan Sino Crystal Semiconductor Co., Ltd, Cor Energy Semiconductor Co. Ltd, Ceramic forum Co., Ltd, Air Water Inc, Xiamen Power Way Advanced Material Co., Ltd
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Key segments of the global GaN epitaxial wafer market:
By type of method
By insert size
- 2 inch pad
- 4 inch insert
- 8 inch insert
- 8 inch and larger insert
By type of application
- Electric vehicles,
- 5G communications,
- High speed trains,
- North America
- Rest of North America
- The rest of europe
- Asia Pacific
- Rest of APAC
- Middle East and Africa
- United Arab Emirates
- South Africa
- Saudi Arabia
- Rest of the MEA
- South America
- Rest of South America
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